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MMBTRC113SS Технические параметры

Diotec Semiconductor  MMBTRC113SS technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single, Pre-Biased
Марка
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236)
Current-Collector (Ic) (Max) 100 mA
Packaging Bulk
Part Status Active
Свойство продукта Значение свойства
Power - Max 200 mW
Transistor Type NPN - Pre-Biased
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA, 5V
Current - Collector Cutoff (Max) 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic 300mV @ 500μA, 10mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Frequency - Transition 250 MHz
Resistor - Base (R1) 22 kOhms
Просмотр сходства
MMBTRC113SS brand manufacturers: Diotec Semiconductor, Anli stock, MMBTRC113SS reference price.Diotec Semiconductor. MMBTRC113SS parameters, MMBTRC113SS Datasheet PDF and pin diagram description download.You can use the MMBTRC113SS Transistors - Bipolar (BJT) - Single, Pre-Biased, DSP Datesheet PDF, find MMBTRC113SS pin diagram and circuit diagram and usage method of function,MMBTRC113SS electronics tutorials.You can download from the Anli.