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BY880-1200 Технические параметры

Diotec Semiconductor AG  BY880-1200 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - RF
Марка
Surface Mount NO
Diode Element Material SILICON
Number of Terminals 2Terminals
ECCN (US) EAR99
HTS 8541.10.00.80
Peak Reverse Repetitive Voltage (V) 1200
Maximum Continuous Forward Current (A) 8@Ta=50C
Peak Non-Repetitive Surge Current (A) 450
Peak Forward Voltage (V) 1.1
Peak Reverse Current (uA) 5
Peak Reverse Recovery Time (ns) 1500(Typ)
Minimum Operating Temperature (°C) -50
Maximum Operating Temperature (°C) 200
Supplier Temperature Grade Commercial
AEC Qualified No
Military No
Mounting Through Hole
Package Length 7.5
PCB changed 2
Package Style LONG FORM
Package Body Material PLASTIC/EPOXY
Operating Temperature-Min -50 °C
Reflow Temperature-Max (s) NOT SPECIFIED
Operating Temperature-Max 175 °C
Rohs Code Yes
Manufacturer Part Number BY880-1200
Package Shape ROUND
Свойство продукта Значение свойства
Manufacturer Diotec Semiconductor AG
Number of Elements 1 Element
Part Life Cycle Code Active
Ihs Manufacturer DIOTEC SEMICONDUCTOR AG
Forward Voltage-Max (VF) 1.1 V
Risk Rank 2.28
Packaging Ammo
Part Status Active
ECCN Code EAR99
Type Switching Diode
Applications GENERAL PURPOSE
HTS Code 8541.10.00.80
Terminal Position AXIAL
Terminal Form WIRE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
Pin Count 2
JESD-30 Code O-PALF-W2
Configuration Single
Diode Type RECTIFIER DIODE
Case Connection ISOLATED
Output Current-Max 8 A
Number of Phases 1Phase
Rep Pk Reverse Voltage-Max 1200 V
Non-rep Pk Forward Current-Max 450 A
Reverse Current-Max 5 µA
Reverse Recovery Time-Max 1.5 µs
Diameter 5.4
RoHS Status Yes with exemptions

BY880-1200 Документы

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