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GBI25G Технические параметры

Diotec Semiconductor AG  GBI25G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - RF
Марка
Surface Mount NO
Diode Element Material SILICON
Number of Terminals 4Terminals
ECCN (US) EAR99
Bridge Type Single Phase
Peak Reverse Repetitive Voltage (V) 400
Peak Average Forward Current (A) 25
Peak RMS Reverse Voltage (V) 280
Peak Non-Repetitive Forward Surge Current (A) 340
Peak Forward Voltage (V) [email protected]
Peak Reverse Current (uA) 5
Peak Reverse Recovery Time (ns) 1500(Typ)
Minimum Operating Temperature (°C) -50
Maximum Operating Temperature (°C) 150
Supplier Temperature Grade Commercial
Automotive Yes
Supplier Package Case GBI
Military No
Mounting Through Hole
Package Height 20
Package Length 30
Package Width 4.6
PCB changed 4
Package Description R-PSFM-T4
Package Style FLANGE MOUNT
Moisture Sensitivity Levels 1
Package Body Material PLASTIC/EPOXY
Reflow Temperature-Max (s) NOT SPECIFIED
Свойство продукта Значение свойства
Operating Temperature-Max 150 °C
Rohs Code Yes
Manufacturer Part Number GBI25G
Package Shape RECTANGULAR
Manufacturer Diotec Semiconductor AG
Number of Elements 4 Elements
Part Life Cycle Code Active
Ihs Manufacturer DIOTEC SEMICONDUCTOR AG
Forward Voltage-Max (VF) 1.05 V
Risk Rank 2.22
Packaging Box
Part Status Active
Additional Feature UL RECOGNIZED
HTS Code 8541.10.00.80
Subcategory Bridge Rectifier Diodes
Terminal Position SINGLE
Terminal Form THROUGH-HOLE
Peak Reflow Temperature (Cel) 260
Reach Compliance Code compliant
Pin Count 4
JESD-30 Code R-PSFM-T4
Qualification Status Not Qualified
Configuration Single
Diode Type Standard Recovery Rectifier
Output Current-Max 4.2 A
Number of Phases 1Phase
Rep Pk Reverse Voltage-Max 400 V
Non-rep Pk Forward Current-Max 340 A
RoHS Status Yes with exemptions

GBI25G Документы

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