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GBI35B Технические параметры
Diotec Semiconductor AG GBI35B technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Diodes - RF | |
| Марка | ||
| ECCN (US) | EAR99 | |
| Bridge Type | Single Phase | |
| Peak Reverse Repetitive Voltage (V) | 100 | |
| Peak Average Forward Current (A) | 5@Ta=50C | |
| Peak RMS Reverse Voltage (V) | 70 | |
| Peak Non-Repetitive Forward Surge Current (A) | 350 | |
| Peak Forward Voltage (V) | [email protected] | |
| Peak Reverse Current (uA) | 5 | |
| Peak Reverse Recovery Time (ns) | 1500(Typ) | |
| Minimum Operating Temperature (°C) | -50 | |
| Maximum Operating Temperature (°C) | 150 | |
| Supplier Temperature Grade | Commercial |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Automotive | No | |
| Military | No | |
| Mounting | Through Hole | |
| Package Height | 20 | |
| Package Length | 30 | |
| Package Width | 4.6 | |
| PCB changed | 4 | |
| Packaging | Box | |
| Part Status | Active | |
| Pin Count | 4 | |
| Configuration | Single | |
| Diode Type | Standard Recovery Rectifier | |
| RoHS Status | Yes with exemptions |
GBI35B Документы
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