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GBI35D Технические параметры

Diotec Semiconductor AG  GBI35D technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - RF
Марка
Surface Mount NO
Diode Element Material SILICON
Number of Terminals 4Terminals
ECCN (US) EAR99
Bridge Type Single Phase
Peak Reverse Repetitive Voltage (V) 200
Peak Average Forward Current (A) 5@Ta=50C
Peak RMS Reverse Voltage (V) 140
Peak Non-Repetitive Forward Surge Current (A) 350
Peak Forward Voltage (V) [email protected]
Peak Reverse Current (uA) 5
Peak Reverse Recovery Time (ns) 1500(Typ)
Minimum Operating Temperature (°C) -50
Maximum Operating Temperature (°C) 150
Supplier Temperature Grade Commercial
Military No
Mounting Through Hole
Package Height 20
Package Length 30
Package Width 4.6
PCB changed 4
Package Description R-PSFM-T4
Package Style FLANGE MOUNT
Package Body Material PLASTIC/EPOXY
Operating Temperature-Min -50 °C
Свойство продукта Значение свойства
Reflow Temperature-Max (s) NOT SPECIFIED
Operating Temperature-Max 150 °C
Rohs Code Yes
Manufacturer Part Number GBI35D
Package Shape RECTANGULAR
Manufacturer Diotec Semiconductor AG
Number of Elements 4 Elements
Part Life Cycle Code Active
Ihs Manufacturer DIOTEC SEMICONDUCTOR AG
Risk Rank 2.19
Packaging Box
Part Status Active
ECCN Code EAR99
HTS Code 8541.10.00.80
Terminal Position SINGLE
Terminal Form THROUGH-HOLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
Pin Count 4
JESD-30 Code R-PSFM-T4
Configuration Single
Diode Type Standard Recovery Rectifier
Output Current-Max 5 A
Number of Phases 1Phase
Rep Pk Reverse Voltage-Max 200 V
Non-rep Pk Forward Current-Max 450 A
RoHS Status Yes with exemptions

GBI35D Документы

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