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MMFTN2362 Технические параметры
Diotec Semiconductor AG MMFTN2362 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Special Purpose | |
| Марка | ||
| Surface Mount | YES | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | DIOTEC SEMICONDUCTOR AG | |
| Drain Current-Max (ID) | 3 A | |
| Moisture Sensitivity Levels | 1 | |
| Number of Elements | 1 Element | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| JESD-609 Code | e3 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| ECCN Code | EAR99 | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Reach Compliance Code | unknown | |
| JESD-30 Code | R-PDSO-G3 | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | N-CHANNEL | |
| JEDEC-95 Code | TO-236 | |
| Drain-source On Resistance-Max | 0.08 Ω | |
| Pulsed Drain Current-Max (IDM) | 12 A | |
| DS Breakdown Voltage-Min | 60 V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Power Dissipation-Max (Abs) | 1.25 W | |
| Feedback Cap-Max (Crss) | 18 pF |
MMFTN2362 Документы
- DatasheetsDISE-S-A0020440672-1.pdf
Индекс :
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