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BYT52B Технические параметры

EIC Semiconductor  BYT52B technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - RF
Марка
ECCN (US) EAR99
HTS 8541.10.00.80
Maximum DC Reverse Voltage (V) 100
Peak Reverse Repetitive Voltage (V) 100
Maximum Continuous Forward Current (A) 1.4
Peak Non-Repetitive Surge Current (A) 50
Peak Forward Voltage (V) 1.3@1A
Peak Reverse Current (uA) 10
Peak Reverse Recovery Time (ns) 200
Minimum Operating Temperature (°C) -65
Свойство продукта Значение свойства
Maximum Operating Temperature (°C) 175
Supplier Package Case D-2
Military No
Mounting Through Hole
Package Length 7.2(Max)
PCB changed 2
Part Status Active
Type Switching Diode
Pin Count 2
Configuration Single
Diameter 4.1(Max)
RoHS Status RoHS Compliant
Просмотр сходства

BYT52B Документы

BYT52B brand manufacturers: EIC Semiconductor, Anli stock, BYT52B reference price.EIC Semiconductor. BYT52B parameters, BYT52B Datasheet PDF and pin diagram description download.You can use the BYT52B Diodes - RF, DSP Datesheet PDF, find BYT52B pin diagram and circuit diagram and usage method of function,BYT52B electronics tutorials.You can download from the Anli.