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EPC EPC2110ENGRT technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Arrays | |
| Марка | EPC | |
| Factory Lead Time | 16 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | Die | |
| Supplier Device Package | Die | |
| Current - Continuous Drain (Id) @ 25℃ | 3.4A | |
| Operating Temperature | -40°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Series | eGaN® | |
| Published | 2015 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Max Operating Temperature | 150°C | |
| Min Operating Temperature | -40°C | |
| FET Type | 2 N-Channel (Dual) Common Source | |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 4A, 5V | |
| Vgs(th) (Max) @ Id | 2.5V @ 700μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 80pF @ 60V | |
| Gate Charge (Qg) (Max) @ Vgs | 0.8nC @ 5V | |
| Drain to Source Voltage (Vdss) | 120V | |
| Continuous Drain Current (ID) | 3.4A | |
| Input Capacitance | 80pF | |
| FET Feature | GaNFET (Gallium Nitride) | |
| Rds On Max | 60 mΩ | |
| RoHS Status | ROHS3 Compliant |