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EAPST1608A0 Технические параметры

Everlight Electronics  EAPST1608A0 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Optical Sensors - Phototransistors
Марка Everlight Electronics
Factory Lead Time 10 Weeks
Package / Case 0603 (1608 metric)
Collector- Emitter Voltage VCEO Max 30 V
Collector-Emitter Breakdown Voltage 30 V
Collector-Emitter Saturation Voltage 0.4 V
Factory Pack QuantityFactory Pack Quantity 3000
RoHS Details
Mounting Styles SMD/SMT
Maximum On-State Collector Current 0.9 mA
Pd - Power Dissipation 75 mW
Minimum Operating Temperature - 25 C
Maximum Operating Temperature + 85 C
Свойство продукта Значение свойства
Moisture Sensitive Yes
Schedule B 8541407080
Manufacturer Part Number EAPST1608A0
Part Life Cycle Code Active
Ihs Manufacturer EVERLIGHT ELECTRONICS CO LTD
Risk Rank 1.45
Packaging Cut Tape
Type IR Chip
Reach Compliance Code compliant
Optoelectronic Device Type PHOTO TRANSISTOR
Wavelength 940 nm
Dark Current 100 nA
Product Phototransistors
Просмотр сходства
EAPST1608A0 brand manufacturers: Everlight Electronics, Anli stock, EAPST1608A0 reference price.Everlight Electronics. EAPST1608A0 parameters, EAPST1608A0 Datasheet PDF and pin diagram description download.You can use the EAPST1608A0 Optical Sensors - Phototransistors, DSP Datesheet PDF, find EAPST1608A0 pin diagram and circuit diagram and usage method of function,EAPST1608A0 electronics tutorials.You can download from the Anli.