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4N35-V Технические параметры

Everlight Electronics Co Ltd  4N35-V technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Optoisolators - Transistor, Photovoltaic Output
Марка
Factory Lead Time 20 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case 6-DIP (0.300, 7.62mm)
Current Transfer Ratio-Min 100% @ 10mA
Number of Elements 1 Element
Operating Temperature -55°C~110°C
Packaging Tube
Published 2013
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Additional Feature UL APPROVED, VDE APPROVED
Voltage - Isolation 5000Vrms
Свойство продукта Значение свойства
Output Voltage 80V
Output Type Transistor with Base
Configuration SINGLE
Number of Channels 1Channel
Voltage - Forward (Vf) (Typ) 1.2V
Input Type DC
Optoelectronic Device Type TRANSISTOR OUTPUT OPTOCOUPLER
Collector Emitter Voltage (VCEO) 300mV
Forward Current-Max 0.06A
Max Input Current 50mA
Current - DC Forward (If) (Max) 60mA
Turn On / Turn Off Time (Typ) 10μs, 9μs
Current Transfer Ratio 100%
Dark Current-Max 50nA
RoHS Status ROHS3 Compliant
4N35-V brand manufacturers: Everlight Electronics Co Ltd, Anli stock, 4N35-V reference price.Everlight Electronics Co Ltd. 4N35-V parameters, 4N35-V Datasheet PDF and pin diagram description download.You can use the 4N35-V Optoisolators - Transistor, Photovoltaic Output, DSP Datesheet PDF, find 4N35-V pin diagram and circuit diagram and usage method of function,4N35-V electronics tutorials.You can download from the Anli.