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EL357NE-G Технические параметры

Everlight Electronics Co Ltd  EL357NE-G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Optoisolators - Transistor, Photovoltaic Output
Марка
Factory Lead Time 20 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 4-SMD, Gull Wing
Number of Pins 4Pins
Collector-Emitter Saturation Voltage 200mV
Current Transfer Ratio-Min 100% @ 5mA
Number of Elements 1 Element
Operating Temperature -55°C~110°C
Packaging Tube
Published 2001
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Additional Feature UL APPROVED
Свойство продукта Значение свойства
Max Power Dissipation 200mW
Voltage - Isolation 3750Vrms
Output Voltage 80V
Output Type Transistor
Configuration SINGLE
Number of Channels 1Channel
Voltage - Forward (Vf) (Typ) 1.2V
Input Type DC
Output Current per Channel 50mA
Collector Emitter Voltage (VCEO) 200mV
Max Collector Current 50mA
Rise / Fall Time (Typ) 3μs 4μs
Forward Current-Max 0.05A
Max Input Current 50mA
Current Transfer Ratio (Max) 200% @ 5mA
Radiation Hardening No
RoHS Status ROHS3 Compliant
EL357NE-G brand manufacturers: Everlight Electronics Co Ltd, Anli stock, EL357NE-G reference price.Everlight Electronics Co Ltd. EL357NE-G parameters, EL357NE-G Datasheet PDF and pin diagram description download.You can use the EL357NE-G Optoisolators - Transistor, Photovoltaic Output, DSP Datesheet PDF, find EL357NE-G pin diagram and circuit diagram and usage method of function,EL357NE-G electronics tutorials.You can download from the Anli.