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EL817(B)-VG Технические параметры

Everlight Electronics Co Ltd  EL817(B)-VG technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Optoisolators - Transistor, Photovoltaic Output
Марка
Factory Lead Time 20 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case 4-DIP (0.300, 7.62mm)
Number of Pins 4Pins
Collector-Emitter Saturation Voltage 200mV
Current Transfer Ratio-Min 130% @ 5mA
Number of Elements 1 Element
Operating Temperature -55°C~110°C
Packaging Tube
Published 2013
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Additional Feature UL RECOGNIZED, VDE APPROVED
Max Power Dissipation 200mW
Свойство продукта Значение свойства
Voltage - Isolation 5000Vrms
Output Voltage 35V
Output Type Transistor
Configuration SINGLE
Number of Channels 1Channel
Voltage - Forward (Vf) (Typ) 1.2V
Input Type DC
Forward Current 20mA
Output Current per Channel 50mA
Collector Emitter Voltage (VCEO) 200mV
Max Collector Current 50mA
Rise / Fall Time (Typ) 6μs 8μs
Max Input Current 60mA
Current - DC Forward (If) (Max) 60mA
Current Transfer Ratio (Max) 260% @ 5mA
Coll-Emtr Bkdn Voltage-Min 80V
RoHS Status ROHS3 Compliant

EL817(B)-VG Документы

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