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EMB20N03V Технические параметры
Excelliance MOS Corporation EMB20N03V technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Special Purpose | |
| Марка | ||
| Surface Mount | YES | |
| Weight | 4 g | |
| Number of Terminals | 5Terminals | |
| Transistor Element Material | SILICON | |
| Exterior Housing Material | 1 | |
| Cable type | RG58 | |
| Operating frequency range | up to 6 GHz | |
| Standing wave ratio | VSWR - 1.1+0.002f | |
| Dielectric strength | 1000 (at Uisol.dc=500 V) V | |
| Contact material | copper alloy with gold plating | |
| Insulator material | Teflon | |
| Mounting method | panel / cable side - crimp | |
| Installation hole size | Φ6.5 mm | |
| Gross weight | 4.00 | |
| Transport packaging size/quantity | 42*28*23.5/5600 | |
| Part Life Cycle Code | Contact Manufacturer | |
| Ihs Manufacturer | EXCELLIANCE MOS CORP | |
| Package Description | SMALL OUTLINE, S-PDSO-F5 | |
| Drain Current-Max (ID) | 12 A | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Package Shape | SQUARE | |
| Package Style | SMALL OUTLINE | |
| ECCN Code | EAR99 | |
| Connector type | SMA series high-frequency connector (socket) | |
| Terminal Position | DUAL | |
| Terminal Form | FLAT | |
| Depth | assembled - 21 mm | |
| Reach Compliance Code | unknown | |
| JESD-30 Code | S-PDSO-F5 | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Insulation resistance | 5000 MOhm min | |
| Impedance | 50 Ohm | |
| Operating Mode | ENHANCEMENT MODE | |
| Case Connection | DRAIN | |
| Polarity/Channel Type | N-CHANNEL | |
| Operating temperature range | -55…+155 °C | |
| Drain-source On Resistance-Max | 0.02 Ω | |
| Pulsed Drain Current-Max (IDM) | 48 A | |
| DS Breakdown Voltage-Min | 30 V | |
| Insertion loss | not more than 0.15 dB | |
| Avalanche Energy Rating (Eas) | 3.2 mJ | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Height | 8 mm |
EMB20N03V Документы
- Datasheets3fa2c6693c2245371f46740abf117c79.pdf
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