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EMF60P02J Технические параметры
Excelliance MOS Corporation EMF60P02J technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Special Purpose | |
| Марка | ||
| Surface Mount | YES | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| Exterior Housing Material | 1 | |
| Part Life Cycle Code | Contact Manufacturer | |
| Ihs Manufacturer | EXCELLIANCE MOS CORP | |
| Package Description | SMALL OUTLINE, R-PDSO-G3 | |
| Drain Current-Max (ID) | 4 A | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Type of connector | pin strips | |
| Connector | socket | |
| Kind of connector | female | |
| Spatial orientation | straight |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Contacts pitch | 2.54mm | |
| Electrical mounting | THT | |
| Connector pinout layout | 2x3 | |
| Row pitch | 2.54mm | |
| ECCN Code | EAR99 | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Reach Compliance Code | unknown | |
| JESD-30 Code | R-PDSO-G3 | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Polarity/Channel Type | P-CHANNEL | |
| Drain-source On Resistance-Max | 0.06 Ω | |
| Pulsed Drain Current-Max (IDM) | 16 A | |
| DS Breakdown Voltage-Min | 20 V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Profile | beryllium copper |
Индекс :
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