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HGT1S12N60C3DS Технические параметры

Fairchild  HGT1S12N60C3DS technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка Fairchild
Mounting Type Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package TO-263AB
Package Bulk
Current-Collector (Ic) (Max) 24 A
Mfr Fairchild Semiconductor
Product Status Active
Test Conditions -
Operating Temperature -40°C ~ 150°C (TJ)
Свойство продукта Значение свойства
Series -
Input Type Standard
Power - Max 104 W
Voltage - Collector Emitter Breakdown (Max) 600 V
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 15A
IGBT Type -
Gate Charge 71 nC
Current - Collector Pulsed (Icm) 96 A
Td (on/off) @ 25°C -
Switching Energy -
Reverse Recovery Time (trr) 32 ns
Просмотр сходства
HGT1S12N60C3DS brand manufacturers: Fairchild, Anli stock, HGT1S12N60C3DS reference price.Fairchild. HGT1S12N60C3DS parameters, HGT1S12N60C3DS Datasheet PDF and pin diagram description download.You can use the HGT1S12N60C3DS Transistors - IGBTs - Single, DSP Datesheet PDF, find HGT1S12N60C3DS pin diagram and circuit diagram and usage method of function,HGT1S12N60C3DS electronics tutorials.You can download from the Anli.