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FDD8444_F085 Технические параметры
Fairchild (ON Semiconductor) FDD8444_F085 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - IGBTs - Single | |
| Марка | ||
| Surface Mount | YES | |
| Number of Terminals | 2Terminals | |
| Transistor Element Material | SILICON | |
| Manufacturer Part Number | FDD8444_F085 | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
| Part Package Code | DPAK | |
| Package Description | ROHS COMPLIANT, DPAK-3 | |
| Manufacturer Package Code | TO252 (D-PAK), MOLDED, 3 LEAD,OPTION AA&AB | |
| Risk Rank | 5.66 | |
| Samacsys Description | Fairchild FDD8444_F085 N-channel MOSFET Transistor, 145 A, 40 V, 3-Pin DPAK | |
| Drain Current-Max (ID) | 20 A | |
| Moisture Sensitivity Levels | 1 | |
| Number of Elements | 1 Element | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| JESD-609 Code | e3 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Pbfree Code | Yes | |
| ECCN Code | EAR99 | |
| Terminal Finish | Matte Tin (Sn) | |
| HTS Code | 8541.29.00.95 | |
| Terminal Position | SINGLE | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 260 | |
| Reach Compliance Code | not_compliant | |
| Pin Count | 3 | |
| JESD-30 Code | R-PSSO-G2 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Case Connection | DRAIN | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | N-CHANNEL | |
| JEDEC-95 Code | TO-252AA | |
| Drain Current-Max (Abs) (ID) | 145 A | |
| Drain-source On Resistance-Max | 0.0052 Ω | |
| DS Breakdown Voltage-Min | 40 V | |
| Avalanche Energy Rating (Eas) | 535 mJ | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Power Dissipation-Max (Abs) | 153 W |
Индекс :
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