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2N4401RP Технические параметры

Fairchild Semiconductor  2N4401RP technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Arrays
Марка
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package TO-92 (TO-226)
Mfr Fairchild Semiconductor
Package Bulk
Product Status Active
Current-Collector (Ic) (Max) 600mA
Свойство продукта Значение свойства
Series -
Operating Temperature -55°C ~ 150°C (TJ)
Power - Max 625mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 1V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 750mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 40V
Frequency - Transition 250MHz
Просмотр сходства
2N4401RP brand manufacturers: Fairchild Semiconductor, Anli stock, 2N4401RP reference price.Fairchild Semiconductor. 2N4401RP parameters, 2N4401RP Datasheet PDF and pin diagram description download.You can use the 2N4401RP Transistors - Bipolar (BJT) - Arrays, DSP Datesheet PDF, find 2N4401RP pin diagram and circuit diagram and usage method of function,2N4401RP electronics tutorials.You can download from the Anli.