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2N5401RA Технические параметры
Fairchild Semiconductor 2N5401RA technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - Arrays | |
| Марка | ||
| Mounting Type | Through Hole | |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | |
| Surface Mount | NO | |
| Supplier Device Package | TO-92 (TO-226) | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| Mfr | Fairchild Semiconductor | |
| Package | Bulk | |
| Product Status | Active | |
| Current-Collector (Ic) (Max) | 600mA | |
| Package Description | CYLINDRICAL, O-PBCY-T3 | |
| Package Style | CYLINDRICAL | |
| Package Body Material | PLASTIC/EPOXY | |
| Rohs Code | Yes | |
| Transition Frequency-Nom (fT) | 100 MHz | |
| Manufacturer Part Number | 2N5401RA | |
| Package Shape | ROUND | |
| Manufacturer | Fairchild Semiconductor Corporation | |
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
| Risk Rank | 7.76 | |
| Part Package Code | TO-92 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Series | - | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.21.00.95 | |
| Terminal Position | BOTTOM | |
| Terminal Form | THROUGH-HOLE | |
| Reach Compliance Code | compliant | |
| Pin Count | 3 | |
| JESD-30 Code | O-PBCY-T3 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE | |
| Power - Max | 625mW | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | PNP | |
| Transistor Type | PNP | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 10mA, 5V | |
| Current - Collector Cutoff (Max) | 50μA (ICBO) | |
| JEDEC-95 Code | TO-92 | |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 5mA, 50mA | |
| Voltage - Collector Emitter Breakdown (Max) | 150V | |
| Frequency - Transition | 400MHz | |
| Collector Current-Max (IC) | 0.6 A | |
| DC Current Gain-Min (hFE) | 50 | |
| Collector-Emitter Voltage-Max | 150 V |
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