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IRFS820B Технические параметры
Fairchild Semiconductor IRFS820B technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | ||
| Mounting Type | Through Hole | |
| Package / Case | TO-220-3 Full Pack | |
| Surface Mount | NO | |
| Supplier Device Package | TO-220F-3 | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| Package | Bulk | |
| Current - Continuous Drain (Id) @ 25℃ | 2.5A (Tj) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Mfr | Fairchild Semiconductor | |
| Power Dissipation (Max) | 33W (Tc) | |
| Product Status | Active | |
| Package Description | TO-220F, 3 PIN | |
| Package Style | FLANGE MOUNT | |
| Moisture Sensitivity Levels | NOT APPLICABLE | |
| Package Body Material | PLASTIC/EPOXY | |
| Reflow Temperature-Max (s) | NOT APPLICABLE | |
| Rohs Code | Yes | |
| Manufacturer Part Number | IRFS820B | |
| Package Shape | RECTANGULAR | |
| Manufacturer | Rochester Electronics LLC | |
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ROCHESTER ELECTRONICS LLC | |
| Risk Rank | 5.19 | |
| Part Package Code | TO-220F | |
| Drain Current-Max (ID) | 2.5 A | |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Series | - | |
| JESD-609 Code | e3 | |
| Pbfree Code | Yes | |
| Terminal Finish | MATTE TIN | |
| Technology | MOSFET (Metal Oxide) | |
| Terminal Position | SINGLE | |
| Terminal Form | THROUGH-HOLE | |
| Peak Reflow Temperature (Cel) | NOT APPLICABLE | |
| Reach Compliance Code | unknown | |
| Pin Count | 3 | |
| JESD-30 Code | R-PSFM-T3 | |
| Qualification Status | COMMERCIAL | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Case Connection | ISOLATED | |
| FET Type | N-Channel | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 2.6Ohm @ 1.25A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 250µA | |
| Input Capacitance (Ciss) (Max) @ Vds | 610 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 10 V | |
| Drain to Source Voltage (Vdss) | 500 V | |
| Vgs (Max) | ±30V | |
| Polarity/Channel Type | N-CHANNEL | |
| Drain-source On Resistance-Max | 2.6 Ω | |
| Pulsed Drain Current-Max (IDM) | 8 A | |
| DS Breakdown Voltage-Min | 500 V | |
| Avalanche Energy Rating (Eas) | 200 mJ | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| FET Feature | - |
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