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UB1111-R32011-7H Технические параметры

Foxconn  UB1111-R32011-7H technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Barrel - Audio Connectors
Марка Foxconn
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220AB
Package Bulk
Current - Continuous Drain (Id) @ 25℃ 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Mfr International Rectifier
Power Dissipation (Max) 144W (Tc)
Product Status Active
Свойство продукта Значение свойства
Operating Temperature -55°C ~ 175°C (TJ)
Series HEXFET®
Technology MOSFET (Metal Oxide)
FET Type N-Channel
Rds On (Max) @ Id, Vgs 39mOhm @ 21A, 10V
Vgs(th) (Max) @ Id 5V @ 100µA
Input Capacitance (Ciss) (Max) @ Vds 1750 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs 26 nC @ 10 V
Drain to Source Voltage (Vdss) 150 V
Vgs (Max) ±20V
FET Feature -
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