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BLC8G20LS-400AVZ Технические параметры
Freescale Semiconductor, Inc. (NXP Semiconductors) BLC8G20LS-400AVZ technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - RF | |
| Марка | ||
| EU RoHS | Compliant | |
| ECCN (US) | EAR99 | |
| Automotive | Unknown | |
| PPAP | Unknown | |
| Channel Mode | Enhancement | |
| Number of Elements per Chip | 2Elements per Chips | |
| Process Technology | LDMOS | |
| Maximum Drain Source Voltage (V) | 65 | |
| Maximum Gate Source Voltage (V) | 13 | |
| Maximum Gate Threshold Voltage (V) | 2.3 | |
| Maximum VSWR | 10 | |
| Maximum Gate Source Leakage Current (nA) | 280 | |
| Maximum IDSS (uA) | 2.8 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Maximum Drain Source Resistance (mOhm) | [email protected] | |
| Typical Forward Transconductance (S) | 19 | |
| Output Power (W) | 475(Typ) | |
| Typical Power Gain (dB) | 15.5 | |
| Maximum Frequency (MHz) | 2000 | |
| Minimum Frequency (MHz) | 1800 | |
| Typical Drain Efficiency (%) | 44 | |
| Minimum Operating Temperature (°C) | -65 | |
| Maximum Operating Temperature (°C) | 225 | |
| Packaging | Tray | |
| Part Status | Obsolete | |
| Configuration | Dual Common Source | |
| Channel Type | N | |
| Mode of Operation | 1-Carrier W-CDMA |
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