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BUK9K29-100E,115 Технические параметры

Freescale Semiconductor, Inc. (NXP Semiconductors)  BUK9K29-100E,115 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка
EU RoHS Compliant with Exemption
ECCN (US) EAR99
HTS 8541.29.00.95
SVHC Yes
SVHC Exceeds Threshold Yes
Automotive Yes
PPAP Unknown
Category Power MOSFET
Process Technology TMOS
Channel Mode Enhancement
Number of Elements per Chip 2Elements per Chips
Maximum Drain Source Voltage (V) 100
Maximum Gate Source Voltage (V) 10
Maximum Gate Threshold Voltage (V) 2.1
Maximum Continuous Drain Current (A) 30
Maximum Gate Source Leakage Current (nA) 100
Maximum IDSS (uA) 1
Maximum Drain Source Resistance (MOhm) 27@10V
Typical Gate Charge @ Vgs (nC) 54@10V
Свойство продукта Значение свойства
Typical Gate Charge @ 10V (nC) 54
Typical Input Capacitance @ Vds (pF) 2618@25V
Maximum Power Dissipation (mW) 68000
Typical Fall Time (ns) 35.1
Typical Rise Time (ns) 6.4
Typical Turn-Off Delay Time (ns) 67.3
Typical Turn-On Delay Time (ns) 6.1
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 175
Mounting Surface Mount
Package Height 1.05(Max)
Package Width 4.7(Max)
Package Length 5.3(Max)
PCB changed 8
Supplier Package LFPAK-D
Packaging Tape and Reel
Part Status Active
Pin Count 8
Configuration Dual Dual Drain
Channel Type N
Просмотр сходства
BUK9K29-100E,115 brand manufacturers: Freescale Semiconductor, Inc. (NXP Semiconductors), Anli stock, BUK9K29-100E,115 reference price.Freescale Semiconductor, Inc. (NXP Semiconductors). BUK9K29-100E,115 parameters, BUK9K29-100E,115 Datasheet PDF and pin diagram description download.You can use the BUK9K29-100E,115 Transistors - FETs, MOSFETs - Arrays, DSP Datesheet PDF, find BUK9K29-100E,115 pin diagram and circuit diagram and usage method of function,BUK9K29-100E,115 electronics tutorials.You can download from the Anli.