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PMCPB5530X,115 Технические параметры

Freescale Semiconductor, Inc. (NXP Semiconductors)  PMCPB5530X,115 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка
Maximum Gate Threshold Voltage (V) 0.9
Maximum Continuous Drain Current (A) 4
Maximum Gate Source Leakage Current (nA) 100
Maximum IDSS (uA) 1
Maximum Drain Source Resistance (MOhm) [email protected]@N Channel|[email protected]@P Channel
Typical Gate Charge @ Vgs (nC) [email protected]@N Channel|8.1@5V@P Channel
Typical Input Capacitance @ Vds (pF) 660@10V@N Channel|785@10V@P Channel
Maximum Gate Source Voltage (V) 12
Maximum Drain Source Voltage (V) 20
Number of Elements per Chip 2Elements per Chips
Channel Mode Enhancement
Process Technology TMOS
Category Small Signal
PPAP Unknown
Automotive Unknown
SVHC Yes
HTS 8541.29.00.95
ECCN (US) EAR99
Свойство продукта Значение свойства
EU RoHS Compliant
Maximum Power Dissipation (mW) 1170
Typical Fall Time (ns) 16
Typical Rise Time (ns) 15@N Channel|14@P Channel
Typical Turn-Off Delay Time (ns) 40
Typical Turn-On Delay Time (ns) 4
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 150
Mounting Surface Mount
Package Height 0.61(Max)
Package Width 2.1(Max)
Package Length 2.1(Max)
PCB changed 6
Supplier Package HUSON EP
Packaging Tape and Reel
Part Status Active
Pin Count 6
Configuration Dual
Channel Type N|P
Просмотр сходства
PMCPB5530X,115 brand manufacturers: Freescale Semiconductor, Inc. (NXP Semiconductors), Anli stock, PMCPB5530X,115 reference price.Freescale Semiconductor, Inc. (NXP Semiconductors). PMCPB5530X,115 parameters, PMCPB5530X,115 Datasheet PDF and pin diagram description download.You can use the PMCPB5530X,115 Transistors - FETs, MOSFETs - Arrays, DSP Datesheet PDF, find PMCPB5530X,115 pin diagram and circuit diagram and usage method of function,PMCPB5530X,115 electronics tutorials.You can download from the Anli.