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2SK3678-01 Технические параметры
Fuji Electric 2SK3678-01 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | Fuji Electric | |
| Mount | Through Hole | |
| Surface Mount | NO | |
| Number of Pins | 3Pins | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| RoHS | Compliant | |
| Turn Off Delay Time | 50 ns | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Package Style | FLANGE MOUNT | |
| Package Body Material | PLASTIC/EPOXY | |
| Manufacturer Part Number | 2SK3678-01 | |
| Package Shape | RECTANGULAR | |
| Manufacturer | Fuji Electric Co Ltd | |
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | FUJI ELECTRIC CO LTD | |
| Risk Rank | 5.84 | |
| Part Package Code | TO-220AB | |
| Drain Current-Max (ID) | 9 A | |
| Max Operating Temperature | 150 °C | |
| Min Operating Temperature | -55 °C | |
| HTS Code | 8541.29.00.95 | |
| Terminal Position | SINGLE | |
| Terminal Form | THROUGH-HOLE |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Reach Compliance Code | unknown | |
| Pin Count | 3 | |
| JESD-30 Code | R-PSFM-T3 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Element Configuration | Single | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 270 W | |
| Turn On Delay Time | 25 ns | |
| Transistor Application | SWITCHING | |
| Drain to Source Voltage (Vdss) | 900 V | |
| Forward Voltage | 900 mV | |
| Polarity/Channel Type | N-CHANNEL | |
| JEDEC-95 Code | TO-220AB | |
| Gate to Source Voltage (Vgs) | 30 V | |
| Drain-source On Resistance-Max | 1.58 Ω | |
| Drain to Source Breakdown Voltage | 900 V | |
| Pulsed Drain Current-Max (IDM) | 36 A | |
| DS Breakdown Voltage-Min | 900 V | |
| Avalanche Energy Rating (Eas) | 287.7 mJ | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Drain to Source Resistance | 1.58 Ω | |
| Width | 4.4958 mm | |
| Height | 15.0114 mm | |
| Length | 9.9822 mm |
Индекс :
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