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- 2MBI100HJ-120-50
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2MBI100HJ-120-50 Технические параметры
Fuji Electric Co Ltd 2MBI100HJ-120-50 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - IGBTs - Single | |
| Марка | ||
| Surface Mount | NO | |
| Number of Terminals | 7Terminals | |
| Transistor Element Material | SILICON | |
| Exterior Housing Material | 2 | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | FUJI ELECTRIC CO LTD | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Turn-off Time-Nom (toff) | 350 ns | |
| Turn-on Time-Nom (ton) | 430 ns | |
| Gross Weight | 7.40 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| ECCN Code | EAR99 | |
| Terminal Position | UPPER | |
| Terminal Form | UNSPECIFIED | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | unknown | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| JESD-30 Code | R-XUFM-X7 | |
| Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | |
| Case Connection | ISOLATED | |
| Polarity/Channel Type | N-CHANNEL | |
| Collector Current-Max (IC) | 150 A | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| VCEsat-Max | 3.9 V | |
| Gate-Emitter Thr Voltage-Max | 6.7 V |
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