Локаль
Язык
- English
- русский
Валюта
- CNY-¥
- RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Корзина для покупок 
Есть складские запасы
Min. : 1
Mult. : 1
Mult. : 1
Not available to buy on line? Want the lower wholesale price? Please
sendRFQ, we will
respond immediately
2SK1020 Технические параметры
Fuji Electric Co Ltd 2SK1020 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Special Purpose | |
| Марка | ||
| Surface Mount | NO | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| Exterior Housing Material | 1 | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | FUJI ELECTRIC CO LTD | |
| Part Package Code | TO-3PL | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Drain Current-Max (ID) | 30 A | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Type of capacitor | ceramic | |
| Kind of capacitor | MLCC | |
| Mounting | SMD | |
| Case - inch | 0603 | |
| Case - mm | 1608 | |
| Capacitors series | KGM | |
| Switching Scheme | OFF-(ON) | |
| Construction Features | horizontal position | |
| Gross Weight | 0.40 | |
| Tolerance | ±5% | |
| ECCN Code | EAR99 | |
| Additional Feature | HIGH VOLTAGE |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Capacitance | 270pF | |
| Terminal Position | SINGLE | |
| Terminal Form | THROUGH-HOLE | |
| Depth | 4.7 (body) mm | |
| Reach Compliance Code | unknown | |
| Pin Count | 3 | |
| JESD-30 Code | R-PSFM-T3 | |
| Qualification Status | Not Qualified | |
| Dielectric | C0G (NP0) | |
| Contact Resistance | 50 mOhm max | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Insulation Resistance | 100 MOhm min | |
| Operating Mode | ENHANCEMENT MODE | |
| Switch Type | DS Series Micro Switch, SMT | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | N-CHANNEL | |
| Operating Temperature Range | -10...+70 °C | |
| Rated Current | 0.05 A | |
| Drain-source On Resistance-Max | 0.25 Ω | |
| Pulsed Drain Current-Max (IDM) | 92 A | |
| DS Breakdown Voltage-Min | 500 V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Power Dissipation-Max (Abs) | 300 W | |
| Rated Voltage | 5 V | |
| Height | 2.0 (body) mm | |
| Width | 5.5 mm |
Индекс :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ