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- MB85RS4MTPF-G-BCERE1
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MB85RS4MTPF-G-BCERE1 Технические параметры
Fujitsu MB85RS4MTPF-G-BCERE1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Memory | |
| Марка | Fujitsu | |
| Package / Case | 1210 (3225 Metric) | |
| Supplier Device Package | 1210 | |
| Package | Tape & Reel (TR) | |
| Base Product Number | RNCF1210D | |
| Mfr | Stackpole Electronics Inc | |
| Product Status | Active | |
| Moisture Sensitive | Yes | |
| Maximum Operating Temperature | + 125 C | |
| Supply Voltage-Max | 3.6 V | |
| Minimum Operating Temperature | - 40 C | |
| Factory Pack QuantityFactory Pack Quantity | 500 | |
| Supply Voltage-Min | 1.8 V | |
| Mounting Styles | SMD/SMT | |
| Interface Type | SPI | |
| Manufacturer | Fujitsu Semiconductor | |
| Brand | Fujitsu Semiconductor | |
| RoHS | Details |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Operating Temperature | -55°C ~ 155°C | |
| Series | RNCF | |
| Size / Dimension | 0.122 L x 0.094 W (3.10mm x 2.40mm) | |
| Tolerance | ±0.5% | |
| Number of Terminations | 2Terminations | |
| Temperature Coefficient | ±50ppm/°C | |
| Resistance | 1.58 Ohms | |
| Composition | Thin Film | |
| Power (Watts) | 0.25W, 1/4W | |
| Subcategory | Memory & Data Storage | |
| Failure Rate | - | |
| Memory Size | 4 Mbit | |
| Organization | 512 k x 8 | |
| Product Type | FRAM | |
| Features | Automotive AEC-Q200 | |
| Product Category | F-RAM | |
| Height Seated (Max) | 0.026 (0.65mm) | |
| Ratings | AEC-Q200 |
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