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MB85R256FPF-G-BND-ERE1 Технические параметры

Fujitsu Electronics America, Inc.  MB85R256FPF-G-BND-ERE1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Memory
Марка
Factory Lead Time 16 Weeks
Mounting Type Surface Mount
Package / Case 28-SOIC (0.295, 7.50mm Width)
Supplier Device Package 28-SOP
Memory Types Non-Volatile
Operating Temperature -40°C~85°C TA
Packaging Tape & Reel (TR)
Свойство продукта Значение свойства
Part Status Obsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Voltage - Supply 2.7V~3.6V
Memory Size 256Kb 32K x 8
Access Time 150ns
Memory Format FRAM
Memory Interface Parallel
Write Cycle Time - Word, Page 150ns
RoHS Status Non-RoHS Compliant
Просмотр сходства

MB85R256FPF-G-BND-ERE1 Документы

MB85R256FPF-G-BND-ERE1 brand manufacturers: Fujitsu Electronics America, Inc., Anli stock, MB85R256FPF-G-BND-ERE1 reference price.Fujitsu Electronics America, Inc.. MB85R256FPF-G-BND-ERE1 parameters, MB85R256FPF-G-BND-ERE1 Datasheet PDF and pin diagram description download.You can use the MB85R256FPF-G-BND-ERE1 Memory, DSP Datesheet PDF, find MB85R256FPF-G-BND-ERE1 pin diagram and circuit diagram and usage method of function,MB85R256FPF-G-BND-ERE1 electronics tutorials.You can download from the Anli.