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2MBI600VG-170E Технические параметры
FUJITSU Limited 2MBI600VG-170E technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - IGBTs - Single | |
| Марка | ||
| Surface Mount | NO | |
| Number of Terminals | 10Terminals | |
| Transistor Element Material | SILICON | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | FUJITSU LTD | |
| Package Description | MODULE-10 | |
| Number of Elements | 2 Elements | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Turn-off Time-Nom (toff) | 2070 ns | |
| Turn-on Time-Nom (ton) | 2280 ns |
| Свойство продукта | Значение свойства | |
|---|---|---|
| ECCN Code | EAR99 | |
| Terminal Position | UPPER | |
| Terminal Form | UNSPECIFIED | |
| Reach Compliance Code | compliant | |
| JESD-30 Code | R-PUFM-X10 | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| Case Connection | ISOLATED | |
| Transistor Application | POWER CONTROL | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 4410 W | |
| Collector Current-Max (IC) | 800 A | |
| Collector-Emitter Voltage-Max | 1700 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| VCEsat-Max | 2.46 V | |
| Gate-Emitter Thr Voltage-Max | 7 V |
2MBI600VG-170E Документы
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