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FHX45X Технические параметры
FUJITSU Limited FHX45X technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Special Purpose | |
| Марка | ||
| Surface Mount | YES | |
| Number of Terminals | 4Terminals | |
| Transistor Element Material | GALLIUM ARSENIDE | |
| Exterior Housing Material | 1 | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | FUJITSU LTD | |
| Part Package Code | DIE | |
| Package Description | UNCASED CHIP, R-XUUC-N4 | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | UNCASED CHIP | |
| ECCN Code | EAR99 | |
| Additional Feature | HIGH RELIABILITY, LOW NOISE |
| Свойство продукта | Значение свойства | |
|---|---|---|
| HTS Code | 8541.21.00.40 | |
| Terminal Position | UPPER | |
| Terminal Form | NO LEAD | |
| Reach Compliance Code | unknown | |
| Pin Count | 4 | |
| JESD-30 Code | R-XUUC-N4 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE | |
| Operating Mode | DEPLETION MODE | |
| Transistor Application | AMPLIFIER | |
| Polarity/Channel Type | N-CHANNEL | |
| DS Breakdown Voltage-Min | 3.5 V | |
| FET Technology | HIGH ELECTRON MOBILITY | |
| Highest Frequency Band | KU BAND | |
| Power Dissipation Ambient-Max | 0.29 W | |
| Power Gain-Min (Gp) | 10 dB |
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