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BC847C Технические параметры

FUXINSEMI  BC847C technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка FUXINSEMI
RoHS true
Collector Cut-Off Current (Icbo) 100nA
Collector-Emitter Breakdown Voltage (Vceo) 45V
Power Dissipation (Pd) 200mW
DC Current Gain (hFE@Ic,Vce) 800@2mA,5V

BC847C Документы

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