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BZV55-B39 Технические параметры
Galaxy Microelectronics BZV55-B39 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Diodes - Zener - Single | |
| Марка | ||
| Surface Mount | YES | |
| Diode Element Material | SILICON | |
| Number of Terminals | 2Terminals | |
| Exterior Housing Material | 1 | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD | |
| Operating Temperature-Max | 200 °C | |
| Package Body Material | GLASS | |
| Package Shape | ROUND | |
| Package Style | LONG FORM | |
| Reference Voltage-Nom | 39 V | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.10.00.50 | |
| Terminal Position | END |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Terminal Form | WRAP AROUND | |
| Reach Compliance Code | unknown | |
| Reference Standard | MIL-STD-202 | |
| JESD-30 Code | O-LELF-R2 | |
| Polarity | UNIDIRECTIONAL | |
| Configuration | SINGLE | |
| Diode Type | ZENER DIODE | |
| Case Connection | ISOLATED | |
| Voltage Tol-Max | 2% | |
| Working Test Current | 5 mA | |
| Reverse Current-Max | 0.05 μA | |
| Dynamic Impedance-Max | 130 Ω | |
| Reverse Test Voltage | 28 V | |
| Output Range | 0.5 W | |
| Voltage Temp Coeff-Max | 41.2 mV/°C | |
| Knee Impedance-Max | 350 Ω |
BZV55-B39 Документы
- Datasheetsc4221b688bffc7f16287afc3faa0766d.pdf
Индекс :
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