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D25XB80 Технические параметры

Galaxy Microelectronics  D25XB80 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - Bridge Rectifiers
Марка
Surface Mount NO
Exterior Housing Material 4
Rohs Code Yes
Part Life Cycle Code Contact Manufacturer
Ihs Manufacturer CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
Forward Voltage-Max (VF) 1.05 V
Operating Temperature-Max 150 °C
Gross Weight 28.60
Свойство продукта Значение свойства
ECCN Code EAR99
Peak Reflow Temperature (Cel) 260
Reach Compliance Code unknown
Configuration BRIDGE, 4 ELEMENTS
Diode Type BRIDGE RECTIFIER DIODE
Output Current-Max 25 A
Number of Phases 1Phase
Rep Pk Reverse Voltage-Max 800 V
Non-rep Pk Forward Current-Max 350 A
Breakdown Voltage-Min 800 V
Просмотр сходства
D25XB80 brand manufacturers: Galaxy Microelectronics, Anli stock, D25XB80 reference price.Galaxy Microelectronics. D25XB80 parameters, D25XB80 Datasheet PDF and pin diagram description download.You can use the D25XB80 Diodes - Bridge Rectifiers, DSP Datesheet PDF, find D25XB80 pin diagram and circuit diagram and usage method of function,D25XB80 electronics tutorials.You can download from the Anli.