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MMBTH10 Технические параметры
Galaxy Microelectronics MMBTH10 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - Single | |
| Марка | ||
| Surface Mount | YES | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| Exterior Housing Material | 1 | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD | |
| Part Package Code | SOT-23 | |
| Package Description | SOT-23, 3 PIN | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Transition Frequency-Nom (fT) | 650 MHz | |
| ECCN Code | EAR99 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| HTS Code | 8541.21.00.75 | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | unknown | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| JESD-30 Code | R-PDSO-G3 | |
| Configuration | SINGLE | |
| Polarity/Channel Type | NPN | |
| Power Dissipation-Max (Abs) | 0.35 W | |
| Collector Current-Max (IC) | 0.05 A | |
| DC Current Gain-Min (hFE) | 60 | |
| Collector-Emitter Voltage-Max | 25 V | |
| VCEsat-Max | 0.5 V | |
| Highest Frequency Band | ULTRA HIGH FREQUENCY BAND | |
| Collector-Base Capacitance-Max | 0.7 pF | |
| Power Dissipation Ambient-Max | 0.35 W |
Индекс :
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