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GPI65030DFN Технические параметры

GaNPower  GPI65030DFN technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Mounting Type Surface Mount
Package / Case Die
Supplier Device Package Die
Mfr GaNPower
Current - Continuous Drain (Id) @ 25℃ 30A
Drive Voltage (Max Rds On, Min Rds On) 6V
Packaging Tape & Reel (TR)
Свойство продукта Значение свойства
Operating Temperature -55°C ~ 150°C (TJ)
Part Status Active
FET Type N-Channel
Vgs(th) (Max) @ Id 1.2V @ 3.5mA
Input Capacitance (Ciss) (Max) @ Vds 241 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs 5.8 nC @ 6 V
Drain to Source Voltage (Vdss) 650 V
Vgs (Max) +7.5V, -12V

GPI65030DFN Документы

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