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G3R12MT12K Технические параметры

GeneSiC Semiconductor  G3R12MT12K technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка GeneSiC Semiconductor
Mounting Type Through Hole
Package / Case TO-247-4
Supplier Device Package TO-247-4
Mfr GeneSiC Semiconductor
Package Tube
Product Status Active
Current - Continuous Drain (Id) @ 25℃ 157A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
Power Dissipation (Max) 567W (Tc)
Base Product Number G3R12M
Vds - Drain-Source Breakdown Voltage 1.2 kV
Vgs th - Gate-Source Threshold Voltage 2.7 V
Pd - Power Dissipation 567 W
Transistor Polarity N-Channel
Maximum Operating Temperature + 175 C
Vgs - Gate-Source Voltage - 10 V, + 22 V
Minimum Operating Temperature - 55 C
Factory Pack QuantityFactory Pack Quantity 30
Mounting Styles SMD/SMT
Channel Mode Enhancement
Свойство продукта Значение свойства
Manufacturer GeneSiC Semiconductor
Brand GeneSiC Semiconductor
Qg - Gate Charge 288 nC
Rds On - Drain-Source Resistance 12 mOhms
RoHS Details
Id - Continuous Drain Current 111 A
Series -
Operating Temperature -55°C ~ 175°C (TJ)
Subcategory MOSFETs
Number of Channels 1 ChannelChannel
FET Type N-Channel
Rds On (Max) @ Id, Vgs 13mOhm @ 100A, 18V
Vgs(th) (Max) @ Id 2.7V @ 50mA
Input Capacitance (Ciss) (Max) @ Vds 9335 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs 288 nC @ 15 V
Drain to Source Voltage (Vdss) 1200 V
Vgs (Max) +22V, -10V
Product Type MOSFET
FET Feature -
Product MOSFET
Product Category MOSFET
Просмотр сходства
G3R12MT12K brand manufacturers: GeneSiC Semiconductor, Anli stock, G3R12MT12K reference price.GeneSiC Semiconductor. G3R12MT12K parameters, G3R12MT12K Datasheet PDF and pin diagram description download.You can use the G3R12MT12K Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find G3R12MT12K pin diagram and circuit diagram and usage method of function,G3R12MT12K electronics tutorials.You can download from the Anli.