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G3R30MT12K Технические параметры

GeneSiC Semiconductor  G3R30MT12K technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка GeneSiC Semiconductor
Package / Case QFN
Mounting Type Through Hole
Supplier Device Package TO-247-4
Standard Frequency 33.333
Operating Temp Range -20C to 70C
Operating Supply Voltage (Max) 3.63(V)
Operating Supply Voltage (Min) 2.25(V)
Programmable No
Continuous Drain Current Id 90A
Package Tube
Base Product Number G3R30
Current - Continuous Drain (Id) @ 25℃ 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 15V
Mfr GeneSiC Semiconductor
Power Dissipation (Max) 400W (Tc)
Product Status Active
Vds - Drain-Source Breakdown Voltage 1.2 kV
Vgs th - Gate-Source Threshold Voltage 2.7 V
Pd - Power Dissipation 281 W
Transistor Polarity N-Channel
Maximum Operating Temperature + 175 C
Vgs - Gate-Source Voltage - 5 V, + 15 V
Minimum Operating Temperature - 55 C
Свойство продукта Значение свойства
Mounting Styles Through Hole
Channel Mode Enhancement
Qg - Gate Charge 118 nC
Rds On - Drain-Source Resistance 30 mOhms
Id - Continuous Drain Current 70 A
Packaging Bulk
Operating Temperature -55°C ~ 175°C (TJ)
Series G3R™
Type CLOCK OSCILLATOR
Technology SiCFET (Silicon Carbide)
Frequency Stability ±25(ppm)
Symmetry-Max 55(%)
Number of Channels 1 ChannelChannel
Load Capacitance 15(pF)
Power Dissipation 400W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 36mOhm @ 50A, 15V
Vgs(th) (Max) @ Id 2.69V @ 12mA
Input Capacitance (Ciss) (Max) @ Vds 3901 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs 155 nC @ 15 V
Drain to Source Voltage (Vdss) 1200 V
Vgs (Max) ±15V
Channel Type N Channel
FET Feature -
Просмотр сходства
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