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G3R350MT12J Технические параметры

GeneSiC Semiconductor  G3R350MT12J technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка GeneSiC Semiconductor
Package / Case TO-263-7
Mounting Type Surface Mount
Supplier Device Package TO-263-7
Continuous Drain Current Id 11A
Vds - Drain-Source Breakdown Voltage 1.2 kV
Typical Turn-On Delay Time 6 ns
Vgs th - Gate-Source Threshold Voltage 2.7 V
Pd - Power Dissipation 64 W
Transistor Polarity N-Channel
Maximum Operating Temperature + 175 C
Vgs - Gate-Source Voltage - 5 V, + 15 V
Unit Weight 0.056438 oz
Minimum Operating Temperature - 55 C
Factory Pack QuantityFactory Pack Quantity 50
Mounting Styles SMD/SMT
Forward Transconductance - Min 1.8 S
Channel Mode Enhancement
Manufacturer GeneSiC Semiconductor
Brand GeneSiC Semiconductor
Qg - Gate Charge 10 nC
Rds On - Drain-Source Resistance 350 mOhms
RoHS Details
Typical Turn-Off Delay Time 6 ns
Id - Continuous Drain Current 10 A
Package Tube
Base Product Number G3R350
Свойство продукта Значение свойства
Current - Continuous Drain (Id) @ 25℃ 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 15V
Mfr GeneSiC Semiconductor
Power Dissipation (Max) 75W (Tc)
Product Status Active
Series G3R
Packaging Tube
Operating Temperature -55°C ~ 175°C (TJ)
Type SiC MOSFET
Subcategory MOSFETs
Technology SiC
Configuration Single
Number of Channels 1 ChannelChannel
Power Dissipation 75W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 420mOhm @ 4A, 15V
Vgs(th) (Max) @ Id 2.69V @ 2mA
Input Capacitance (Ciss) (Max) @ Vds 334 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 15 V
Rise Time 5 ns
Drain to Source Voltage (Vdss) 1200 V
Vgs (Max) ±15V
Product Type MOSFET
Transistor Type MOSFET
Channel Type N Channel
FET Feature -
Product MOSFET
Product Category MOSFET
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