Локаль
Язык
- English
- русский
Валюта
- CNY-¥
- RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
GeneSiC Semiconductor G3R40MT12D technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | GeneSiC Semiconductor | |
| Mounting Type | Surface Mount | |
| Package / Case | 48-TFSOP (0.240, 6.10mm Width) | |
| Supplier Device Package | 48-TSSOP | |
| Frequency-Max | 220MHz | |
| Continuous Drain Current Id | 71A | |
| Package | Tube | |
| Base Product Number | G3R40 | |
| Current - Continuous Drain (Id) @ 25℃ | 71A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 15V | |
| Mfr | GeneSiC Semiconductor | |
| Power Dissipation (Max) | 333W (Tc) | |
| Product Status | Active | |
| Vds - Drain-Source Breakdown Voltage | 1.2 kV | |
| Vgs th - Gate-Source Threshold Voltage | 2.7 V | |
| Pd - Power Dissipation | 297 W | |
| Transistor Polarity | N-Channel | |
| Maximum Operating Temperature | + 175 C | |
| Vgs - Gate-Source Voltage | - 5 V, + 15 V | |
| Minimum Operating Temperature | - 55 C | |
| Mounting Styles | Through Hole | |
| Channel Mode | Enhancement | |
| Qg - Gate Charge | 88 nC | |
| Rds On - Drain-Source Resistance | 40 mOhms | |
| Id - Continuous Drain Current | 63 A |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Operating Temperature | 0°C ~ 70°C | |
| Series | -- | |
| Packaging | Tape & Reel (TR) | |
| Part Status | Active | |
| Technology | SiCFET (Silicon Carbide) | |
| Voltage - Supply | 3.135 V ~ 3.465 V | |
| Base Part Number | ICS9DB108 | |
| Output | Clock | |
| Number of Channels | 1 ChannelChannel | |
| Number of Circuits | 1Circuit | |
| Power Dissipation | 333W | |
| FET Type | N-Channel | |
| Rds On (Max) @ Id, Vgs | 48mOhm @ 35A, 15V | |
| Vgs(th) (Max) @ Id | 2.69V @ 10mA | |
| Input Capacitance (Ciss) (Max) @ Vds | 2929 pF @ 800 V | |
| Gate Charge (Qg) (Max) @ Vgs | 106 nC @ 15 V | |
| Drain to Source Voltage (Vdss) | 1200 V | |
| Vgs (Max) | ±15V | |
| Input | Clock | |
| Ratio - Input:Output | 1:8 | |
| PLL | Yes | |
| Differential - Input:Output | Yes/Yes | |
| Channel Type | N Channel | |
| Main Purpose | PCI Express (PCIe) | |
| FET Feature | - |