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G3R60MT07D Технические параметры
GeneSiC Semiconductor G3R60MT07D technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | GeneSiC Semiconductor | |
| Mounting Type | Through Hole | |
| Package / Case | TO-247-3 | |
| Supplier Device Package | TO-247-3 | |
| Mfr | GeneSiC Semiconductor | |
| Package | Tube | |
| Product Status | Active | |
| Current - Continuous Drain (Id) @ 25℃ | - | |
| Drive Voltage (Max Rds On, Min Rds On) | - | |
| Power Dissipation (Max) | - | |
| Vds - Drain-Source Breakdown Voltage | 750 V | |
| Vgs th - Gate-Source Threshold Voltage | 2.5 V | |
| Pd - Power Dissipation | 171 W | |
| Transistor Polarity | N-Channel | |
| Maximum Operating Temperature | + 175 C |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Vgs - Gate-Source Voltage | - 5 V, + 15 V | |
| Minimum Operating Temperature | - 55 C | |
| Mounting Styles | Through Hole | |
| Channel Mode | Enhancement | |
| Qg - Gate Charge | 47 nC | |
| Rds On - Drain-Source Resistance | 60 mOhms | |
| Id - Continuous Drain Current | 43 A | |
| Operating Temperature | - | |
| Number of Channels | 1 ChannelChannel | |
| FET Type | - | |
| Rds On (Max) @ Id, Vgs | - | |
| Vgs(th) (Max) @ Id | - | |
| Drain to Source Voltage (Vdss) | 750 V | |
| Vgs (Max) | - | |
| FET Feature | - |
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