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GBJ25B Технические параметры

GeneSiC Semiconductor  GBJ25B technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - RF
Марка GeneSiC Semiconductor
Mounting Type Through Hole
Package / Case 4-SIP, GBJ
Supplier Device Package GBJ
ECCN (US) EAR99
Bridge Type Single Phase
Peak Reverse Repetitive Voltage (V) 100
Peak Average Forward Current (A) 4.5
Peak Non-Repetitive Forward Surge Current (A) 350
Peak Forward Voltage (V) [email protected]
Peak Reverse Current (uA) 5
Minimum Operating Temperature (°C) -50
Maximum Operating Temperature (°C) 150
AEC Qualified No
Supplier Package Case GBJ
Military No
Mounting Through Hole
Package Height 20
Package Length 30
Package Width 4.6
PCB changed 4
Package Bulk
Base Product Number GBJ25
Mfr GeneSiC Semiconductor
Product Status Active
Ir - Reverse Current 25 A
Maximum Operating Temperature + 150 C
Minimum Operating Temperature - 50 C
Factory Pack QuantityFactory Pack Quantity 200
Mounting Styles Through Hole
Свойство продукта Значение свойства
Manufacturer GeneSiC Semiconductor
Brand GeneSiC Semiconductor
If - Forward Current 4.5 A
Peak Reverse Voltage 100 V
RoHS Details
Operating Temperature -55°C ~ 150°C (TJ)
Series -
Packaging Bulk
Part Status Active
Type Single Phase Bridge
Subcategory Diodes & Rectifiers
Technology Standard
Pin Count 4
Configuration Single
Diode Type Single Phase
Current - Reverse Leakage @ Vr 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If 1.05 V @ 12.5 A
Max Surge Current 350 A
Output Current-Max 25
Current - Average Rectified (Io) 25 A
Product Type Bridge Rectifiers
Rep Pk Reverse Voltage-Max 100
Voltage - Peak Reverse (Max) 100 V
Product Bridge Rectifier
Vf - Forward Voltage 1.05 V
Product Category Bridge Rectifiers
Width 4.6 mm
Height 20 mm
Length 30 mm
RoHS Status Yes with exemptions

GBJ25B Документы

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