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GBJ25G Технические параметры

GeneSiC Semiconductor  GBJ25G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - RF
Марка GeneSiC Semiconductor
Mounting Type Through Hole
Package / Case 4-SIP, GBJ
Supplier Device Package GBJ
Package Width 4.6
PCB changed 4
Package Length 30
Package Height 20
Mounting Through Hole
Military No
Supplier Package Case GBJ
AEC Qualified No
Maximum Operating Temperature (°C) 150
Minimum Operating Temperature (°C) -50
Peak Reverse Current (uA) 5
Peak Forward Voltage (V) [email protected]
Peak Non-Repetitive Forward Surge Current (A) 350
Peak Average Forward Current (A) 4.5
Peak Reverse Repetitive Voltage (V) 400
Bridge Type Single Phase
HTS 8541.10.00.80
ECCN (US) EAR99
Package Bulk
Base Product Number GBJ25
Mfr GeneSiC Semiconductor
Product Status Active
Ir - Reverse Current 25 A
Maximum Operating Temperature + 150 C
Unit Weight 0.471396 oz
Minimum Operating Temperature - 50 C
Factory Pack QuantityFactory Pack Quantity 200
Свойство продукта Значение свойства
Mounting Styles Through Hole
Manufacturer GeneSiC Semiconductor
Brand GeneSiC Semiconductor
If - Forward Current 4.5 A
Peak Reverse Voltage 400 V
RoHS Details
Operating Temperature -55°C ~ 150°C (TJ)
Series -
Packaging Bulk
Part Status Active
Type Single Phase Bridge
Subcategory Diodes & Rectifiers
Technology Standard
Pin Count 4
Configuration Single
Diode Type Single Phase
Current - Reverse Leakage @ Vr 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If 1.05 V @ 12.5 A
Max Surge Current 350 A
Output Current-Max 25
Current - Average Rectified (Io) 25 A
Product Type Bridge Rectifiers
Rep Pk Reverse Voltage-Max 400
Voltage - Peak Reverse (Max) 400 V
Product Bridge Rectifier
Vf - Forward Voltage 1.05 V
Product Category Bridge Rectifiers
Width 4.6 mm
Height 20 mm
Length 30 mm
RoHS Status Yes with exemptions

GBJ25G Документы

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