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GeneSiC Semiconductor GD2X25MPS17N technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Diodes - Rectifiers - Arrays | |
| Марка | GeneSiC Semiconductor | |
| Mounting Type | Chassis Mount | |
| Package / Case | SOT-227-4, miniBLOC | |
| Supplier Device Package | SOT-227 | |
| Mfr | GeneSiC Semiconductor | |
| Package | Tube | |
| Product Status | Active | |
| Current - Average Rectified (Io) (per Diode) | 50A (DC) | |
| Base Product Number | GD2X | |
| Vr - Reverse Voltage | 1700 V | |
| Ir - Reverse Current | 1 uA | |
| Pd - Power Dissipation | 524 W | |
| Maximum Operating Temperature | + 175 C | |
| Unit Weight | 1 oz | |
| Minimum Operating Temperature | - 55 C | |
| Factory Pack QuantityFactory Pack Quantity | 10 | |
| Mounting Styles | Screw Mount | |
| Vrrm - Repetitive Reverse Voltage | 1.7 kV | |
| Manufacturer | GeneSiC Semiconductor |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Brand | GeneSiC Semiconductor | |
| If - Forward Current | 100 A | |
| RoHS | Details | |
| Ifsm - Forward Surge Current | 250 A | |
| Packaging | Tube | |
| Subcategory | Diodes & Rectifiers | |
| Technology | SiC | |
| Configuration | Dual | |
| Speed | No Recovery Time > 500mA (Io) | |
| Diode Type | Silicon Carbide Schottky | |
| Current - Reverse Leakage @ Vr | 20 μA @ 1700 V | |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 25 A | |
| Operating Temperature - Junction | -55°C ~ 175°C | |
| Voltage - DC Reverse (Vr) (Max) | 1700 V | |
| Product Type | Schottky Diodes & Rectifiers | |
| Diode Configuration | 2 Independent | |
| Reverse Recovery Time (trr) | 0 ns | |
| Product | Schottky Silicon Carbide Diodes | |
| Vf - Forward Voltage | 1.5 V | |
| Product Category | Schottky Diodes & Rectifiers |