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MBR120150CTR Технические параметры
GeneSiC Semiconductor MBR120150CTR technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Diodes - Rectifiers - Arrays | |
| Марка | GeneSiC Semiconductor | |
| Lifecycle Status | PRODUCTION (Last Updated: 5 months ago) | |
| Factory Lead Time | 6 Weeks | |
| Mount | Chassis Mount | |
| Mounting Type | Chassis Mount | |
| Package / Case | Twin Tower | |
| Diode Element Material | SILICON | |
| Number of Elements | 2 Elements | |
| Operating Temperature (Max.) | 150°C | |
| Packaging | Bulk | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 2Terminations | |
| Applications | POWER |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Terminal Position | UPPER | |
| Terminal Form | UNSPECIFIED | |
| JESD-30 Code | R-PUFM-X2 | |
| Element Configuration | Common Anode | |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
| Diode Type | Schottky | |
| Current - Reverse Leakage @ Vr | 1mA @ 150V | |
| Voltage - Forward (Vf) (Max) @ If | 880mV @ 60A | |
| Operating Temperature - Junction | -55°C~150°C | |
| Max Reverse Voltage (DC) | 150V | |
| Average Rectified Current | 60A | |
| Number of Phases | 1Phase | |
| Non-rep Pk Forward Current-Max | 800A | |
| Diode Configuration | 1 Pair Common Anode | |
| Reverse Current-Max | 1000μA | |
| RoHS Status | RoHS Compliant |
MBR120150CTR Документы
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