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MBR12035CT Технические параметры
GeneSiC Semiconductor MBR12035CT technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Diodes - Rectifiers - Arrays | |
| Марка | GeneSiC Semiconductor | |
| Lifecycle Status | PRODUCTION (Last Updated: 6 months ago) | |
| Factory Lead Time | 6 Weeks | |
| Mount | Chassis Mount | |
| Mounting Type | Chassis Mount | |
| Package / Case | Twin Tower | |
| Number of Pins | 2Pins | |
| Diode Element Material | SILICON | |
| Number of Elements | 2 Elements | |
| Packaging | Bulk | |
| Published | 2012 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 2Terminations | |
| ECCN Code | EAR99 | |
| Max Operating Temperature | 175°C | |
| Min Operating Temperature | -40°C | |
| Applications | POWER | |
| HTS Code | 8541.10.00.80 | |
| Terminal Position | UPPER | |
| Terminal Form | UNSPECIFIED |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Element Configuration | Common Cathode | |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
| Diode Type | Schottky | |
| Current - Reverse Leakage @ Vr | 3mA @ 20V | |
| Voltage - Forward (Vf) (Max) @ If | 650mV @ 120A | |
| Forward Current | 60A | |
| Max Reverse Leakage Current | 1μA | |
| Operating Temperature - Junction | -55°C~150°C | |
| Max Surge Current | 800A | |
| Current - Average Rectified (Io) | 120A DC | |
| Forward Voltage | 650mV | |
| Max Reverse Voltage (DC) | 35V | |
| Average Rectified Current | 120A | |
| Number of Phases | 1Phase | |
| Peak Reverse Current | 1A | |
| Max Repetitive Reverse Voltage (Vrrm) | 35V | |
| Diode Configuration | 1 Pair Common Cathode | |
| Max Forward Surge Current (Ifsm) | 800A | |
| REACH SVHC | No SVHC | |
| RoHS Status | RoHS Compliant |
Индекс :
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