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MBR12045CTR Технические параметры

GeneSiC Semiconductor  MBR12045CTR technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - Rectifiers - Arrays
Марка GeneSiC Semiconductor
Lifecycle Status PRODUCTION (Last Updated: 4 months ago)
Factory Lead Time 6 Weeks
Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case Twin Tower
Diode Element Material SILICON
Number of Elements 2 Elements
Packaging Bulk
Published 2010
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Max Operating Temperature 175°C
Min Operating Temperature -40°C
Applications POWER
HTS Code 8541.10.00.80
Terminal Position UPPER
Свойство продукта Значение свойства
Terminal Form UNSPECIFIED
JESD-30 Code R-PUFM-X2
Element Configuration Common Anode
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Schottky, Reverse Polarity
Current - Reverse Leakage @ Vr 3mA @ 20V
Voltage - Forward (Vf) (Max) @ If 650mV @ 60A
Forward Current 120A
Max Reverse Leakage Current 1μA
Operating Temperature - Junction -55°C~150°C
Max Surge Current 800A
Output Current-Max 60A
Current - Average Rectified (Io) 120A DC
Max Reverse Voltage (DC) 45V
Average Rectified Current 120A
Number of Phases 1Phase
Peak Reverse Current 1A
Max Repetitive Reverse Voltage (Vrrm) 45V
Diode Configuration 1 Pair Common Anode
RoHS Status RoHS Compliant

MBR12045CTR Документы

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