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MBR20080CT Технические параметры

GeneSiC Semiconductor  MBR20080CT technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - Rectifiers - Arrays
Марка GeneSiC Semiconductor
Lifecycle Status PRODUCTION (Last Updated: 6 months ago)
Factory Lead Time 6 Weeks
Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case Twin Tower
Diode Element Material SILICON
Number of Elements 2 Elements
Packaging Bulk
Published 2013
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Max Operating Temperature 175°C
Min Operating Temperature -40°C
Applications POWER
HTS Code 8541.10.00.80
Свойство продукта Значение свойства
Terminal Position UPPER
Terminal Form UNSPECIFIED
JESD-30 Code R-PUFM-X2
Element Configuration Common Cathode
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Schottky
Current - Reverse Leakage @ Vr 5mA @ 20V
Voltage - Forward (Vf) (Max) @ If 840mV @ 100A
Forward Current 200A
Max Reverse Leakage Current 1μA
Max Surge Current 1.5kA
Output Current-Max 100A
Current - Average Rectified (Io) 200A DC
Max Reverse Voltage (DC) 80V
Average Rectified Current 200A
Number of Phases 1Phase
Peak Reverse Current 1A
Max Repetitive Reverse Voltage (Vrrm) 80V
Diode Configuration 1 Pair Common Cathode
RoHS Status RoHS Compliant
Просмотр сходства
MBR20080CT brand manufacturers: GeneSiC Semiconductor, Anli stock, MBR20080CT reference price.GeneSiC Semiconductor. MBR20080CT parameters, MBR20080CT Datasheet PDF and pin diagram description download.You can use the MBR20080CT Diodes - Rectifiers - Arrays, DSP Datesheet PDF, find MBR20080CT pin diagram and circuit diagram and usage method of function,MBR20080CT electronics tutorials.You can download from the Anli.