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MBR40035CTRL Технические параметры

GeneSiC Semiconductor  MBR40035CTRL technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - Rectifiers - Arrays
Марка GeneSiC Semiconductor
Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case Twin Tower
Supplier Device Package Twin Tower
Packaging Bulk
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Element Configuration Common Anode
Speed Fast Recovery =< 500ns, > 200mA (Io)
Свойство продукта Значение свойства
Diode Type Schottky
Current - Reverse Leakage @ Vr 3mA @ 35V
Voltage - Forward (Vf) (Max) @ If 600mV @ 200A
Operating Temperature - Junction -55°C~150°C
Voltage - DC Reverse (Vr) (Max) 35V
Current - Average Rectified (Io) 200A
Max Reverse Voltage (DC) 35V
Average Rectified Current 200A
Diode Configuration 1 Pair Common Anode
RoHS Status RoHS Compliant
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MBR40035CTRL Документы

MBR40035CTRL brand manufacturers: GeneSiC Semiconductor, Anli stock, MBR40035CTRL reference price.GeneSiC Semiconductor. MBR40035CTRL parameters, MBR40035CTRL Datasheet PDF and pin diagram description download.You can use the MBR40035CTRL Diodes - Rectifiers - Arrays, DSP Datesheet PDF, find MBR40035CTRL pin diagram and circuit diagram and usage method of function,MBR40035CTRL electronics tutorials.You can download from the Anli.