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MBRT200200 Технические параметры
GeneSiC Semiconductor MBRT200200 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Diodes - Rectifiers - Arrays | |
| Марка | GeneSiC Semiconductor | |
| Lifecycle Status | PRODUCTION (Last Updated: 5 months ago) | |
| Factory Lead Time | 6 Weeks | |
| Mount | Chassis Mount | |
| Mounting Type | Chassis Mount | |
| Package / Case | Three Tower | |
| Diode Element Material | SILICON | |
| Number of Elements | 2 Elements | |
| Operating Temperature (Max.) | 150°C | |
| Packaging | Bulk | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| Applications | POWER | |
| Terminal Position | UPPER |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Terminal Form | UNSPECIFIED | |
| JESD-30 Code | R-PUFM-X3 | |
| Element Configuration | Common Cathode | |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
| Diode Type | Schottky | |
| Current - Reverse Leakage @ Vr | 1mA @ 200V | |
| Voltage - Forward (Vf) (Max) @ If | 920mV @ 100A | |
| Case Connection | ISOLATED | |
| Operating Temperature - Junction | -55°C~150°C | |
| Max Reverse Voltage (DC) | 200V | |
| Average Rectified Current | 100A | |
| Number of Phases | 1Phase | |
| Non-rep Pk Forward Current-Max | 1500A | |
| Diode Configuration | 1 Pair Common Cathode | |
| Reverse Current-Max | 1000μA | |
| RoHS Status | RoHS Compliant |
MBRT200200 Документы
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