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MSRT15060D Технические параметры
GeneSiC Semiconductor MSRT15060D technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Diodes - Rectifiers - Arrays | |
| Марка | GeneSiC Semiconductor | |
| Mounting Type | Chassis Mount | |
| Package / Case | Three Tower | |
| Supplier Device Package | Three Tower | |
| Package | Bulk | |
| Base Product Number | MSRT150 | |
| Mfr | GeneSiC Semiconductor | |
| Product Status | Active | |
| Current - Average Rectified (Io) (per Diode) | 150A | |
| Vr - Reverse Voltage | 600 V | |
| Maximum Operating Temperature | + 150 C | |
| Minimum Operating Temperature | - 55 C | |
| Factory Pack QuantityFactory Pack Quantity | 40 | |
| Mounting Styles | SMD/SMT | |
| Manufacturer | GeneSiC Semiconductor | |
| Brand | GeneSiC Semiconductor |
| Свойство продукта | Значение свойства | |
|---|---|---|
| If - Forward Current | 150 A | |
| RoHS | Details | |
| Ifsm - Forward Surge Current | 2250 A | |
| Series | - | |
| Packaging | Bulk | |
| Type | Standard Recovery Rectifier Module | |
| Subcategory | Discrete Semiconductor Modules | |
| Technology | Standard | |
| Speed | Standard Recovery >500ns, > 200mA (Io) | |
| Current - Reverse Leakage @ Vr | 10 µA @ 600 V | |
| Voltage - Forward (Vf) (Max) @ If | 1.1 V @ 150 A | |
| Operating Temperature - Junction | -55°C ~ 150°C | |
| Voltage - DC Reverse (Vr) (Max) | 600 V | |
| Product Type | Discrete Semiconductor Modules | |
| Diode Configuration | 1 Pair Series Connection | |
| Product | Rectifier Modules | |
| Product Category | Discrete Semiconductor Modules |
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